Light-emitting device package

ABSTRACT

A light-emitting device package includes a lead frame, a light-emitting device chip, a molding structure, and a plurality of slots. The lead frame includes a first lead and a second lead including metal and spaced apart from each other. The light-emitting device chip is mounted on a first area of the lead frame, which includes a part of the first lead and a part of the second lead. The molding structure includes an outer barrier surrounding an outside of the lead frame and an inner barrier. The plurality of slots are formed in each of the first lead and the second lead. The inner barrier divides the lead from into the first area and a second area. The inner barrier fills between the first lead in the second lead. The second area is located outside of the first area. The plurality of slots are filled by the molding structure.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a Continuation-in-Part of co-pending U.S. patentapplication Ser. No. 16/853,991, filed on Apr. 21, 2020, which is aContinuation of U.S. patent application Ser. No. 16/550,816, filed onAug. 26, 2019 (now U.S. Pat. No. 10,892,391), which is a Continuation ofco-pending U.S. patent application Ser. No. 15/796,190 (now U.S. Pat.No. 10,510,936) filed on Oct. 27, 2017, which claims the benefit ofKorean Patent Application No. 10-2017-0053563, filed on Apr. 26, 2017 inthe Korean Intellectual Property Office, the disclosures of which areincorporated by reference herein in their entirety.

BACKGROUND

The inventive concept relates to a light-emitting device package, andmore particularly, to a light-emitting device package including ametallic lead frame and a plastic molding material.

A semiconductor light-emitting device such as a light-emitting diode(LED) or a laser diode (LD) uses an electroluminescence phenomenon,i.e., a phenomenon in which light may be emitted from a material (e.g.,a semiconductor material) by applying a current or voltage, and may beformed based on a compound semiconductor. For example, a galliumnitride-based light-emitting device may be widely used as a device withhigh efficiency and high brightness. A light-emitting device such as anLED has advantages, such as a long lifetime, low power consumption, fastresponse speed, environmental friendliness, etc., and may be used as alight source in various products such as a backlight of a lightingdevice and a display device.

SUMMARY

The inventive concept provides a light-emitting device package withenhanced light extraction efficiency. The light-emitting device packagemay improve a property difference between a lead frame and a moldingmaterial.

According to an aspect of the inventive concept, there may be provided alight-emitting device package including a lead frame including a firstlead and a second lead including metal and spaced apart from each other;a light-emitting device chip mounted on a first area of the lead frame,the first area of the lead frame including a part of the first lead anda part of the second lead; a molding structure including an outerbarrier surrounding an outside of the lead frame and an inner barrier;and a plurality of slots formed in each of the first lead and the secondlead. The inner barrier divides the lead frame into the first area and asecond area. The inner barrier fills between the first lead and thesecond lead. The second area is located outside of the first area. Theplurality of slots are filled by the molding structure.

According to another aspect of the inventive concept, there may beprovided a light-emitting device package including a lead frameincluding a first lead and a second lead electrically separated fromeach other and including metal; a molding structure; a light-emittingdevice chip mounted on a first area of the lead frame in a flip-chipstructure; and a plurality of slots formed in each of the first lead andthe second lead, and filled by the molding structure. The moldingstructure includes an outer barrier surrounding an outside of the leadframe, an inner barrier, and an electrode separator electricallyseparating the first lead and the second lead by filling between thefirst lead and the second lead. The inner barrier divides the lead frameinto the first area and a second area. The second area is disposedoutside the first area.

According to another aspect of the inventive concept, there may beprovided a light-emitting device package including a first lead, asecond lead spaced apart from the first lead, a light-emitting devicechip mounted on a first area that includes a portion of the first leadand a portion of the second lead; a molding structure including an outerbarrier, an inner barrier and an electrode separator; and a plurality ofslots formed in the first lead and the second lead, and filled by themolding structure. The inner barrier divides the first lead into a firstportion and a second portion. The second portion is located outside ofthe first portion. The inner barrier divides the second lead into athird portion and a fourth portion. The fourth portion is locatedoutside of the third portion. The first portion of the first lead isincluded in the first area. The third portion of the second lead isincluded in the first area. The first lead and the second lead aresurrounded by the outer barrier. The electrode separator is disposedbetween the first lead and the second lead, and electrically separatesthe first lead and the second lead. The first groove is disposed in thefirst portion of the first lead. The second groove is disposed in thethird portion of the second lead.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the inventive concept will be more clearly understoodfrom the following detailed description taken in conjunction with theaccompanying drawings, in which:

FIG. 1 is a perspective view of a light-emitting device packageaccording to an embodiment;

FIG. 2 is a perspective view illustrating only a lead frame and amolding structure of the light-emitting device package of FIG. 1 andexcluding a light-emitting chip;

FIG. 3A is a plan view of the light-emitting device package of FIG. 2;

FIG. 3B is a plan view showing only the lead frame of the light-emittingdevice package of FIG. 2;

FIG. 3C is a cross-sectional view taken along a line I-I′ of thelight-emitting device package of FIG. 2;

FIGS. 4 and 5 are cross-sectional views of the light-emitting devicepackage of FIG. 2 taken along lines II-II′ and III-III′, respectively,and are cross-sectional views including a light-emitting device chip;

FIG. 6A is a plan view of a light-emitting device package according toan embodiment and is a plan view corresponding to FIG. 3B;

FIG. 6B is a cross-sectional view of the light-emitting device packageof FIG. 6A taken along a line IV-IV′ and includes a light-emittingdevice chip;

FIG. 7 is a cross-sectional view of a light-emitting device packageaccording to an embodiment, and corresponds to FIG. 6B;

FIGS. 8A through 11B are plan views of light-emitting device packagesaccording to embodiments and illustrate structures of lead framesincluded in the light-emitting device packages;

FIG. 12 is a plan view of a light-emitting device package according toan embodiment, and is corresponds to FIG. 3B;

FIGS. 13A and 13B are respectively a cross-sectional view of alight-emitting device package and a plan view showing a structure of alead frame included in the light-emitting device package according to anembodiment;

FIGS. 14A and 14B are cross-sectional views of light emitting devicepackages according to embodiments; and

FIG. 15 is a graph of a relative luminous flux according to a radius ofcurvature of a reflective layer in the light emitting device package ofFIG. 14A.

DETAILED DESCRIPTION OF THE EMBODIMENTS

FIG. 1 is a perspective view of a light-emitting device package 100according to an embodiment. FIG. 2 is a perspective view illustratingonly a lead frame 110 and a molding structure 120 of the light-emittingdevice package 100 of FIG. 1 excluding a light-emitting chip 130. FIG.3A is a plan view of the light-emitting device package 100 of FIG. 2.FIG. 3B is a plan view showing only the lead frame 110 of thelight-emitting device package 100 of FIG. 2. FIG. 3C is across-sectional view taken along a line I-I′ of the light-emittingdevice package 100 of FIG. 2. For reference, a fluorescent layer may beomitted in the light-emitting device package 100 of FIGS. 1 to 3C.

Referring to FIGS. 1 to 3C, the light-emitting device package 100 of thepresent embodiment may include the lead frame 110, the molding structure120, and the light-emitting device chip 130.

The lead frame 110 may be formed in a metal plate shape as shown in FIG.3B and may include a first lead 110-1 and a second lead 110-2. Forexample, the lead frame 110 may be formed of a metal such as anickel-iron alloy, copper, a copper alloy, or the like. On an uppersurface of the lead frame 110, plating of a highly reflective materialsuch as silver (Ag) may be performed. A plating layer of the highlyreflective material on the upper surface of the lead frame 110 mayreflect light generated from the light-emitting device chip 130 toincrease light extraction efficiency and brightness. The plating layerof tire highly reflective material may be formed on an entire uppersurface of the lead frame 110 or only on a part of the upper surface ofthe lead frame 110 in terms of a structural aspect of the light-emittingdevice package 100.

The first lead 110-1 and the second lead 110-2 may be spaced apart fromeach other in the light-emitting device package 100 and may have asymmetrical structure with respect to a reference line RL at a center.Therefore, for convenience of explanation, only the first lead 110-1will be described below.

The first lead 110-1 may include an inner lead 110in surrounded by themolding structure 120 and an outer lead 110out protruding from themolding structure 120. The first lead 110-1 may be formed with an innerslot SLin which may be recessed inward from an inner side adjacent tothe reference line RL and an outer slot SLout which may be recessedinward from an outer side. When the reference line RL extends in asecond direction (e.g., a Y-axis direction), the inner slot SLin and theouter slot SLout extend in a first direction (e.g., an X-axis direction)perpendicular to the second direction (e.g., the Y-axis direction).

The inner slots SLin may be formed at both ends of a first area Ain inthe second direction (e.g., the Y-axis direction) where thelight-emitting device chip 130 is mounted. The first area Ain will bedescribed in more detail in a description of the molding structure 120.Two inner slots SLin may be formed in each of the first lead 110-1 andthe second lead 110-2. Two inner slots SLin symmetrical with respect tothe reference line RL may be formed in one pair. For example, the innerslots SLin of the first lead 110-1 and the second lead 110-2 on an upperportion of the first area Ain in the second direction (e.g., the Y-axisdirection) may constitute a first inner slot pair SLin1, and the innerslots SLin of the first and second leads 110-1 and 110-2 on a lowerportion of the first area Ain in the second direction (e.g., the Y-axisdirection) may constitute a second inner slot pair SLin2.

The outer slot SLout may be formed at both ends of the first area Ain inthe first direction (e.g., the X-axis direction). The outer slot SLoutmay be formed in each of the first lead 110-1 and the second lead 110-2so that two outer slots SLout symmetrical with respect to the referenceline RL may constitute one pair. As shown in FIG. 3B. the outer slotSLout may have a broad width on an entrance side and a narrow width onan inner side, but the outer slot SLout is not limited thereto. Theouter slot SLout may have a structure in which the widths of theentrance side and the inner side are substantially the same.

The inner slot SLin and the outer slot SLout may be filled with themolding structure 120 in a state of the light-emitting device package100, as shown in FIGS. 3A and 3C. As described above, the slots SLin andSLout may be formed in the first lead 110-1 and the second lead 110-2 ofthe lead frame 110. respectively. Portions of the slots SLin and SLoutmay be filled by the molding structure 120, and thus coupling betweenthe lead frame 110 and the molding structure 120 may become strong,thereby improving reliability of the light-emitting device package 100.For example, in a conventional light-emitting device package, a stressmay be generated due to a difference in physical properties between alead frame made of a metal and a molding structure made of a plasticmaterial. As a result, unstable coupling such as widening between thelead frame and the molding structure or bending of the led frame mayoccur, which causes the reliability of the light-emitting device packageto deteriorate. However, since the slots SLin and SLout are formed inthe lead frame 110 in the light-emitting device package 100 of theinventive concept, the stress due to the difference in physicalproperties between the lead frame 110 and the molding structure 120 maybe alleviated, and thus the coupling between the frame 110 and themolding structure 120 may be made firm. Therefore, the reliability ofthe light-emitting device package 100 may be improved.

The slots SLin and SLout of the lead frame 110 may function to expand apassage through which molding materials in a fluid state flow in amolding process for forming the molding structure 120, and thus aninjection property of the molding process may be improved. The injectionproperty of the molding process will be described in more detail in adescription of an inner barrier 124 of the molding structure 120.

A dimple or a groove 112 may be formed in the first area Ain of thefirst lead 110-1. The groove 112 may include a first groove 112 a and asecond groove 112 b. When the light-emitting device chip 130 is mountedin the first area Ain of the lead frame 110 in a flip-chip structurethrough the solder ball 135 in FIG. 4, the first groove 112 a may beformed in a portion in which die solder ball 135 is positioned.Accordingly, the number of the first grooves 112 a may be equal to thenumber of the solder balls 135. The first groove 112 a will be describedin more detail in a description of FIG. 4.

The second groove 112 b may be a groove for separating the solder balls135 front each other. For example, the second grooves 112 b mayaccommodate a pan of the solder ball 135 that may flow in a fluid state,such as a fluxing process to the solder ball 135, or a reflow process,thereby functioning to prevent the solder ball 135 from adhering to theadjacent solder ball 135. In some embodiments, the second groove 112 bmay be omitted.

The molding structure 120 may be formed of a white molding materialhaving excellent light reflectance. The molding structure 120 may beformed of a black or other colored molding material as well as the whitemolding material, depending on a structure and a function. For example,when the molding structure 120 does not perform a high reflectionfunction, the molding structure 120 may be formed of the black or othercolored molding material independent of a reflective property. Themolding structure 120 may be formed through a molding process using amold, for example, an injection molding process.

The molding structure 120 may include a molding resin and a highlyreflective powder dispersed in the molding resin. For example, themolding resin may be formed of an epoxy resin, a silicone resin, apolyester resin, or the like having a high reflectance. The highlyreflective powder may include, for example, metal powder having highreflectivity, for example, metal powder such as Al or Ag. The metalpowder may be appropriately contained in a range in which the moldingstructure 120 is maintained as an insulator. Also, the highly reflectivepowder may include ceramic powder having high reflectivity, for example,ceramic powder such as TiO2, Al2O3, Nb2O5, or ZnO. The highly reflectivepowder may reflect the light generated from the light-emitting devicechip 130. thereby minimizing loss of light generated from a side surfaceof the light-emitting device chip 130 and enhancing the light extractionefficiency.

The molding structure 120 may include an outer barrier 122, the innerbarrier 124, and an electrode separator 126.

The outer barrier 122 may have a rectangular ring structure and surroundan outer portion of the lead frame 110. In addition, a portion extendingfrom the outer barrier 122 may cover an outer side surface of the leadframe 110. The outer barrier 122 may have a predetermined height from anupper surface of the lead frame 110. The height of the externalpartition 122, which is the outer barrier 122, may be determined bytaking into consideration a thickness of the light-emitting device chip130, a thickness of a fluorescent layer 140 of FIG. 4, the lightextraction efficiency, and the like as a whole.

The outer barrier 122 may have an inner surface structure that maymaximize extraction efficiency of light emitted from the light-emittingdevice chip 130. For example, as shown in FIGS. 1 to 3C, the innersurface of the outer barrier 122 may be formed in a structure having twostep inclined surfaces. Each angle of the two step inclined surfaces maybe formed so as to maximize extraction efficiency of light. Of course,the inner surface of the outer partition wall 122, which is the outerbarrier 122, may be formed in a structure having one inclined surfaceinstead of the two step inclined surfaces, or in a structure havingthree or more step inclined surfaces.

In the light-emitting device package 100 of the present embodiment, theouter barrier 122 has a rectangular ring structure, but the outerbarrier 122 is not limited to the rectangular ring structure. Forexample, in the light-emitting device package 100 of the presentembodiment, the outer barrier 122 may have a variety of structures suchas a circular ring, an elliptical ring, and a polygonal ring other thana rectangle ring.

The inner barrier 124 may divide an area of the upper surface of thelead frame 110 that is located inside the outer barrier 122 into thefirst area Ain and the second area Aout. In this regard, the first areaAin may be located at a central portion of the lead frame 110 as an areawhere the light-emitting device chip 130 is mounted. The second areaAout may surround the first area Ain and may be located at an outerportion of the lead frame 110. A Zener diode or the like may be arrangedin the second area Aout. The Zener diode is a diode having acharacteristic of being electrically conducted in a reverse directionwhen a voltage equal to or higher than a Zener voltage is applied in thereverse direction. The Zener diode may be connected in parallel to thelight-emitting device chip 130. When an overvoltage occurs, a currentflows through the Zener diode, thereby protecting the light-emittingdevice chip 130 from the overvoltage.

The inner barrier 124 may have a rectangular ring shape as shown in FIG.3A and the like. A shape of the inner partition wall 124, which is theinner barrier, is not limited to the rectangular ring shape. Forexample, the inner barrier 124 may be formed in various shapes based ona shape of the light-emitting device chip 130, a shape of the first areaAin, a flip-chip bonding structure of the light-emitting device chip130, or light extraction efficiency, etc. Further, the inner barrier 124may be formed as a closed ring structure as shown in FIG. 3A. However,the inner barrier 124 is not limited to the closed ring structure butmay be formed with an open ring structure. The closed ring structure ofthe inner barrier 124 will be described in more detail in a descriptionof FIG. 12.

The inner barrier 124 may be formed to have a very thin thickness fromthe upper surface of the lead frame 110. For example, the internalbarrier 124 may be formed to have a thickness that allows the moldingprocess to proceed smoothly while physically separating the first areaAin and the second area Ain.

The inner barrier 124 may be integrally connected to a portion of themolding structure 120 that fills the inner slot SLin and the outer slotSLout, as seen in FIGS. 3C, 4, and 5. An electrode separator 126, theinner slot SLin and the outer slot SLout of the lead frame 110 may befirst filled with a molding material having fluidity in the moldingprocess of forming the molding structure 120 using a mold. Then, aportion of a passage on the upper surface of the lead frame 110 may befilled with the molding material so that the inner barrier 124 may beformed. Accordingly, the inner barrier 124 may be relatively easilyformed in a desired shape. For example, the presence of the slots SLinand SLout may greatly improve extrudability of the portion of the innerbarrier 124.

More specifically, if the slots SLin and SLout do not exist in the firstand second leads 110-1 and 110-2 of the lead frame 110, the moldingmaterial having fluidity may flow through a passage corresponding to theelectrode separator 126 between the first lead 110-1 and the second lead110-2 so that the electrode separator 126 may be first filled with themolding material. Also, a thin rectangular ring passage on the topsurface of the lead frame 110 may be filled with the molding material sothat the inner barrier 124 may be formed. However, it may not be easy tofill the thin rectangular ring passage with the molding materialcompletely. That is, the extrudability may be reduced at a portioncorresponding to the inner barrier 124, and thus the inner barrier 124may not have a desired shape and rigidity. On the other hand, if theslots SLin and SLout exist in the first and second leads 110-1 and 110-2of the lead frame 110 as in the light-emitting device package 100 of thepresent embodiment, the portion of the slots SLin and SLout may be usedas the passage through which the molding material flows, and an upperportion of the molding material filling the slots SLin and SLout mayconstitute a part of the inner barrier 124. Thus, the inner barrier 124may he easily formed in a desired shape, and may also have a relativelyhigh rigidity. For example, the thin ring passage may be a very shortportion between the inner slot SLin and the outer slot SLout, and maycorrespond to a portion adjacent to an edge portion of the inner barrier124.

The electrode separator 126 may be a portion that fills a gap betweenthe first lead 110-1 and the second lead 110-2, and may electrically andphysically separate the first lead 110-1 and the second lead 110-2 fromeach other. As seen from FIGS. 3A and 3B, the electrode separator 126may have a broad width at the outer portion corresponding to the secondarea Aout and a narrow width at the inner portion corresponding to thefirst area Ain. Since a width of the outer portion of the electrodeseparator 126 is designed to be broad, the molding process may proceedsmoothly. In addition, since a width of the inner portion of theelectrode separator 126 is designed to be narrow, a flip-chip bondingprocess may be smoothly performed according to a size of thelight-emitting device chip 130 that is being miniaturized.

As seen from FIG. 3C and FIG. 5, the electrode separator 126 may beintegrally connected to an inner slot molding part 125in of the moldingstructure 120 filling the inner slot SLin. Also, the inner slot moldingpan 125in may be integrally connected to the inner barrier 124. Theouter slot SLout may be filled with an outer slot molding part 125out.The outer slot molding part 125out may be integrally connected to theouter barrier 122 at the outer portion of the lead frame 110 and may beintegrally connected to the inner barrier 124 adjacent to the first areaAin.

As seen from FIG. 3C, the electrode separator 126, the inner slotmolding part 125in, and the outer slot molding part 125out may havewidths of lower surface larger than those of upper surface. However, insome embodiments, the electrode separator 126, the inner slot moldingportion 125in, and the outer slot molding portion 125out may be formedto have substantially the same width on the lower surface and the uppersurface. In other embodiments, the widths of the electrode separator126, the inner slot molding portion 125in, and the outer slot moldingportion 125out may be gradually widened from the upper surface towardthe lower surface.

The light-emitting device chip 130 may be mounted on the first area Ainof the lead frame 110 in a flip-chip structure. The light-emittingdevice chip 130 may be, for example, a light-emitting diode (LED) chip.The light-emitting device chip 130 may include a first conductivesemiconductor layer, an active layer, and a second conductivesemiconductor layer. In the light-emitting device package 100 of thepresent embodiment, the light-emitting device chip 130 may include allstructures that may be mounted in the flip-chip structure on the leadframe 110. Various structures, characteristics, and the like of thelight-emitting device chip 130 are already known, and detaileddescriptions thereof are omitted. In descriptions of FIGS. 4 and 5, theflip-chip structure of the light-emitting device chip 130 will bedescribed in more detail.

FIGS. 4 and 5 are cross-sectional views of the light-emitting devicepackage 100 of FIG. 2 taken along lines II-II′ and III-III′,respectively, and are cross-sectional views including a light-emittingdevice chip. For convenience of understanding, the description will bemade with reference to FIGS. 1 to 3C together.

Referring to FIGS. 4 and 5, in the light-emitting device package 100 ofthe present embodiment, the light-emitting device chip 130 may bemounted on the first area Ain of the lead frame 110 in a flip-chipstructure. The flip-chip structure may refer to a structure in which thelight-emitting device chip 130 is mounted on the lead frame 110 suchthat an active surface of the light-emitting device chip 130 faces a topsurface of the lead frame 110. In the light-emitting device package 100of the present embodiment, the light-emitting device chip 130 may bemounted in the flip-chip structure on the first area Ain of the leadframe 110 using a solder ball 135.

As described above, the groove 112 may be formed in the first area Ainof the lead frame 110, and may include the first groove 112 a and thesecond groove 112 b. The solder ball 135 may be positioned in the firstgroove 112 a and may be used to mount the light-emitting device chip 130on the first area Ain of the lead frame 110. The light-emitting devicechip 130 may be coupled to the lead frame 110 in the flip-chip structureby using the solder ball 135 positioned in the first groove 112 a. Thus,coupling between the light-emitting device chip 130 and the lead frame110 may be strengthened.

More specifically, the solder ball 135 may be positioned to fill aninner portion of the first grove 112 a. Accordingly, a contact areabetween the solder ball 135 and the lead frame 110 may relativelyincrease rather than a case where the solder ball 135 is directlypositioned on the lead frame 110 that does not have the first groove 112a. An increase in the contact area between the solder ball 135 and thelead frame 110 may contribute to a strengthening of the coupling betweenthe light-emitting device chip 130 and the lead frame 110 by the solderball 135. A crack may be generated in the solder ball 135 due to astress caused by a difference in physical properties between thelight-emitting device chip 130 and the lead frame 110. The crack mayprogress to cause the solder ball 135 to be separated from the leadframe 110. However, in the light-emitting device package 100 of thepresent embodiment, since the solder ball 135 is positioned in the firstgroove 112 a, the contact area between the solder ball 135 and the leadframe 110 may increase. When the crack occurs, the solder ball 135 maynot be separated from the lead frame 110 by preventing the crack fromprogressing in the first groove 112 a. Therefore, in the light-emittingdevice package 100 of the present embodiment, the connection failurebetween the light-emitting device chip 130 and the lead frame 110 may beimproved, and reliability of the light-emitting device package 100 maybe improved.

As shown in FIGS. 4 and 5, the outer barrier 122 may have a first heightH1 from a top surface of the lead frame 110, and the inner barrier 124may have a second height H2 from the top surface of the lead frame 110.The first height H1 of the outer partition 122 may be much larger thanthe second height H2 of the inner partition 124 as shown in FIGS. 4 and5.

The first height H1 of the outer barrier 122 may be determined byconsidering a thickness of the light-emitting device chip 130, athickness of the fluorescent layer 140 of FIG. 4, light extractionefficiency, and the like as a whole. For example, the first height H1 ofthe outer barrier 122 may be 400 μm or more.

The second height H2 of the inner barrier 124 may be sufficient tophysically separate the first area Ain and the second area Ain. Thesecond height 112 of the inner barrier 124 may be determined inconsideration of extrudability of a molding process of a portionexisting only on the upper surface of the lead frame 110. For example,the second height H2 of the inner barrier 124 may be several tens ofmicrometers.

The light-emitting device chip 130 may be mounted on the first area Ainof the lead frame 110 in such a manner that a part of the light-emittingdevice chip 130 overlaps with the inner barrier 124 in a first direction(e.g., an X-axis direction) and a second direction (e.g., a Y-axisdirection). In other words, a horizontal cross section of thelight-emitting device chip 130 may be larger than the first area Ainsurrounded by the inner barrier 124. Meanwhile, as shown in FIG. 4, afirst space S may be maintained between the light-emitting device chip130 and the inner barrier 124. For example, the first space S may bevery fine of several micrometers. As described above, since a spacebetween the light-emitting device chip 130 and the inner barrier 124 maybe kept very narrow, and thus light may be prevented from flowingbetween the light-emitting device chip 130 and the lead frame 110,thereby minimizing absorption of light by a solder ball, etc. andincreasing the light extraction efficiency. Meanwhile, in someembodiments, the light-emitting device chip 130 may be mounted on thefirst area Ain of the lead frame 110 so as to be in contact with theinner barrier 124, and thus the space between the light-emitting devicechip 130 and the inner barrier 124 may not be present.

The fluorescent layer 140 covering the light-emitting device chip 130may be arranged in the outer barrier 122. The fluorescent layer 140 maybe electrically insulated and may be formed of resin containing awavelength conversion material. For example, the wavelength conversionmaterial may be a fluorescent material, and the resin may be a siliconeresin, an epoxy resin, or a mixed resin thereof.

The fluorescent layer 140 may include two or more materials that providelight of different wavelengths. In some embodiments, the fluorescentlayer 140 may be formed of a mixture of green fluorescent powder and redfluorescent powder. Further, in some other embodiments, the phosphorlayer 140 may have a structure in which a plurality of wavelengthconversion layers are stacked. For example, the fluorescent layer 140may have a structure in which a first wavelength conversion layer thatoutputs green light and a second wavelength conversion layer thatoutputs red light are stacked. The fluorescent layer 140 may convertlight generated in the light-emitting device chip 130 into white lightor light having a specific wavelength.

On the other hand, in some embodiments, the fluorescent layer 140 may beomitted. Further, in some other embodiments, a microlens may be arrangedon the fluorescent layer 140.

In the light-emitting device package 100 of the present embodiment,since the slots SLin and SLout are formed in the lead frame 110, stressdue to a difference in physical properties between the lead frame 110and the molding structure 120 may be alleviated, and coupling betweenthe frame 110 and the molding structure 120 may be made rigid.Accordingly, a reliability of the light-emitting device package 100 maybe improved.

In addition, in a molding process for forming the molding structure 120,the slots SLin and SLout of the lead frame 110 may function to expand apassage through which molding materials in a fluid state flow, such thatan extrudability of the molding process may be improved. Thus, arigidity of the molding structure 120 may be enhanced, therebycontributing to an improvement of the reliability of the light-emittingdevice package 100.

In addition, in the light-emitting device package 100 of the presentembodiment, the groove 112 may be formed in the first area Ain of thelead frame 110, and the solder ball 135 may be positioned in the groove112 to mount the device chip 130 on the lead frame 110 in a flip-chipstructure. Thus, a coupling between the light-emitting device chip 130and the lead frame 110 may be enhanced. Therefore, the reliability ofthe light-emitting device package 100 may be improved.

FIG. 6A is a plan view of a light-emitting device package 100 aaccording to an embodiment, and is a plan view corresponding to FIG. 3B.FIG. 6B is a cross-sectional view of the light-emitting device package100 a of FIG. 6A taken along a line IV-IV′ and includes thelight-emitting device chip 130.

Referring to FIGS. 6A and 6B, the light-emitting device package 100 a ofthe present embodiment may be different from the light-emitting devicepackage 100 of FIG. 1. Especially, an inner barrier 124 a of a moldingstructure 120 a in FIGS. 6A and 6B is different from the inner barrier124 of the molding structure 120 in FIG. 1. Specifically, in thelight-emitting device package 100 a of the present embodiment, the innerbarrier 124 a of the molding structure 120 a may have a step on an uppersurface thereof. For example, the inner barrier 124 a may be dividedinto an inner portion 124in adjacent to the first area Ain and an outerportion 124out that is located outside the inner portion 124in. An uppersurface of the inner portion 124in may be lower than an upper surface ofthe outer portion 124out. Accordingly, the upper surface of the innerbarrier 124 a may have a lower stepped upper surface of the innerportion 124in, and a higher stepped surface of the outer portion 124out.

Meanwhile, the light-emitting device chip 130 may overlap the innerportion 124in of the inner barrier 124 a in a first direction (e.g., anX-axis direction) and a second direction (e.g., a Y-axis direction). Theouter portion 124out of the inner barrier 121 a may be located outsidethe light-emitting device chip 130 and may not overlap thelight-emitting device chip 130. An upper surface of the outer portion124out of the inner barrier 124 a may be higher than a lower surface ofthe light-emitting device chip 130. For example, the upper surface ofthe outer portion 124out of the inner barrier 124 a may have a thirdheight H3 from an upper surface of tire lead frame 110. The third heightH3 may be greater than a distance between the light-emitting device chip130 and the lead frame 110, that is, a height of the solder ball 135 onthe upper surface of the lead frame 110.

However, in some embodiments, the upper surface of the outer portion124out of the inner barrier 124 a may be at the same level as the lowersurface of the light-emitting device chip 130, or may be lower than thelower surface of the light-emitting device chip 130.

FIG. 7 is a cross-sectional view of a light-emitting device package 100b according to an embodiment, and is a cross-sectional viewcorresponding to FIG. 6B.

Referring to FIG. 7, the light-emitting device package 100 b of thepresent embodiment may be different from the light-emitting devicepackage 100 a of FIG. 6B in that the light-emitting device package 100 bfurther includes a reflective layer 150. Specifically, in thelight-emitting device package 100 b of the present embodiment, thereflective layer 150 may be formed between an inner wall of the outerbarrier 122 and the inner barrier 124 a. After, for example, the moldingstructure 120 is formed through the molding process, the reflectivelayer 150 may be formed by a suitable structure and size between theinner wall of the outer barrier 122 and the inner barrier 124 a througha dispensing process.

The reflective layer 150 may be formed of a material having a highreflectance such as the molding structure 120 described above. Forexample, the reflective layer 150 may include a highly reflective metalpowder such as Al or Ag, or a highly reflective ceramic powder such asTiO2, Al2O3, Nb2O5 or ZnO in a resin such as white silicone. Further,the reflective layer 150 may be formed such that an inner surface has aninclination angle for maximizing light reflection efficiency. Forexample, the inner surface of the reflective layer 150 may have aninclination angle of about 45 degrees to about 55 degrees.

When the reflective layer 150 is formed on the inner wall of the outerbarrier 122 as in the light-emitting device package 100 b of the presentembodiment, the molding structure 120 a may be formed of a generalmolding resin such as an epoxy resin. In other words, since thereflective layer 150 functions to reflect light generated in thelight-emitting device chip 130, the outer barrier 122 of the moldingstructure 120 a does not need to perform a function to reflect light.Since the upper surface of the lead frame 110 is covered by thereflective layer 150, a plating layer of a highly reflective materialsuch as a silver plating layer may be omitted on a part or entirety ofthe upper surface of the lead frame 110.

In the light-emitting device package 100 b of the present embodiment,the reflective layer 150 may be formed between the outer barrier 122 andthe inner barrier 124 a that have a step on upper surfaces. However, thereflective layer 150 may not be formed only between the outer barrier122 and the inner barrier 124 a that have the step on upper surfaces.For example, as in the light-emitting device package 100 of FIG. 3A, thereflective layer 150 may be formed between the outer barrier 122 and theinner barrier 124 that have no step.

FIGS. 8A through 11B are plan views of light-emitting device packages100 c, 100 d, 100 e, and 100 f according to embodiments and plan viewsillustrating structures of lead frames included in the light-emittingdevice packages. In FIGS. 8A, 9A, 10A, and 11A, a light-emitting devicechip is omitted for convenience of understanding.

Referring to FIGS. 8A and 8B, the light-emitting device package 100 c ofthe present embodiment may be different from the light-emitting devicepackage 100 of FIG. 1. Especially, a lead frame 110 a in FIGS 8A and 8Bis different from the lead frame 110 in FIG. 1. Specifically, thelight-emitting device package 100 of FIG. 1 may include two pairs ofinner slots SLin1, SLin2 and a pair of outer slots SLout in a first lead110-1 and a second lead 110-2 of the lead frame 110. However, in thelight-emitting device package 100 c of the present embodiment, no outerslot may be formed in the first lead 110 a-1 and the second lead 110 a-2of the lead frame 110 a, and the two pairs of inner slots SLin1, SLin2maybe formed in the first lead 110 a-1 and the second lead 110 a-2 ofthe lead frame 110 a.

A structure of the molding structure 120 b of the light-emitting devicepackage 100 c of the present embodiment may be also different from thatof the molding structure 120 of the light-emitting device package 100 ofFIG. 1 due to a structural difference of the lead frame 110 a. Forexample, in the light-emitting device package 100 c of the presentembodiment, since no outer slot is formed in the lead frame 110 a, themolding structure 120 b may not include an outer slot molding portion.In addition, due to an absence of the outer slot, both sides of an innerbarrier 124 b extending in a second direction (e.g., a Y-axis direction)may be formed thin on the lead frame 110 a. In other words, in the caseof the light-emitting device package 100 of FIG. 1, the outer slotmolding portion 125out of FIG. 3A and both sides extending in the seconddirection (e.g., the Y-axis direction) of the inner barrier 124 b may beintegrally connected at a center portion, and both sides of the innerbarrier 124 b extending in the second direction (e.g., the Y-axisdirection) may extend to a lower surface of the lead frame 110 throughthe outer slot molding part 125out. However, in the light-emittingdevice package 100 c of the present embodiment, both sides of theinternal barrier 124 b extending in the second direction (e.g., theY-axis direction) may be formed only on an upper surface of the leadframe 110 a without expanding to the lower surface of the lead frame 110a because no outer slot molding portion is present.

In the light-emitting device package 100 c of the present embodiment, onthe other hand, the lead frame 110 a inside the outer barrier 122 may bedivided into the first area Ain and the second area Aout by the innerbarrier 124 b. The light-emitting device chip 130 may be mounted in aflip-chip structure on the first area Ain of the lead frame 110 a. Thelight-emitting device chip 130 may be mounted in a flip-flop structureon the first area Ain of the lead frame 110 a by using the solder ball135 positioned in the groove 112 formed in the lead frame 110 a, thatis, the first groove 112 a.

Referring to FIGS. 9A and 9B, the light-emitting device package 100 d ofthe present embodiment may be different from the light-emitting devicepackage 100 of FIG. 1. Especially, the lead frame 110 b in FIGS. 9A and9B is different from the lead frame 110 in FIG. 1. Specifically, thelight-emitting device package 100 of FIG. 1 may have a structure inwhich the first lead 110-1 and the second lead 110-2 of the lead frame110 are spaced apart at a narrow interval in an inner portioncorresponding to the first area Ain, and are spaced apart at a wideinterval in an outer portion corresponding to the second area Aout. Onthe other hand, the light-emitting device package 100 d of the presentembodiment may have a structure in which the first lead 110 b-1 and thesecond lead 110 b-2 of the lead frame 110 b may be spaced apart at anequal interval irrespective of rite inner portion or the outer portion.

A structure of the molding structure 120 c of the light-emitting devicepackage 100 d of the present embodiment may be different from that ofthe molding structure 120 of the light-emitting device package 100 ofFIG. 1 due to a structural difference of the lead frame 110 b. Forexample, in the light-emitting device package 100 d of the presentembodiment, since the first lead 110 b-1 and the second lead 110 b-2 ofthe lead frame 110 b are spaced apart at an equal interval irrespectiveof their positions, an electrode separator 126 a of the moldingstructure 120 c may also have the corresponding same width and extend inthe second direction (e.g., the Y-axis direction).

In addition, a region division of the lead frame 110 b by the innerbarrier 124 and a structure of the inner barrier 124, the inner slotmolding portion 125in, the outer slot molding portion 125out, the groove112 in the first area Ain of the lead frame 110 b, and mounting of aflip-chip structure of the light-emitting device chip 130 by using thesolder ball 135 positioned in the groove 112 are the same as describedwith reference to FIGS. 1 through 5.

Referring to FIGS. 10A and 10B, the light-emitting device package 100 eof the present embodiment may be different from the light-emittingdevice package 100 of FIG. 1. Especially, die lead frame 110 c in FIGS.10A and 10B is different from the lead frame 110 in FIG. 1.Specifically, in the light-emitting device package 100 of FIG. 1, thegroove 112 may be formed in the first area Ain of the first lead 110-1and the second lead 110-2 of the lead frame 110. The light emittingdevice chip 130 may be mounted in a flip-chip structure on the leadframe 110 by using the solder ball 135 positioned in the groove 112, forexample, the first groove 112 a. On the contrary, in the light-emittingdevice package 100 e of the present embodiment, a separate groove maynot be formed in the first area Ain of the first lead 110 c-l and thesecond lead 110 c-2 of the lead frame 110 c. Accordingly, in thelight-emitting device package 100 e of the present embodiment, thelight-emitting device chip 130 may be mounted in a flip-chip structureby using a solder ball positioned on a flat upper surface of the firstarea Ain of the lead frame 110 c.

In addition, a region division of the lead frame 110 c by the innerbarrier 124 and a structure of the inner barrier 124, the electrodeseparation portion 126, the inner slot molding portion 125in, the outerslot molding portion 125out, etc. may be the same as described withreference to FIGS. 1 through 5.

Referring to FIGS. 11A and 11B, the light-emitting device package 100 fof the present embodiment may be different from the light-emittingdevice package 100 of FIG. 1. Especially, a lead frame 110 d in FIGS.11A and 11B is different from the lead frame 110 in FIG. 1.Specifically, in the light-emitting device package 100 of FIG. 1, twopairs of inner slots SLin1 and SLin2 and a pair of outer slots SLout maybe formed in the first lead 110-1 and the second lead 110-2 of the leadframe 110. However, in the light-emitting device package 100 e of thepresent embodiment, one inner slot SLin−1, one inner slot SLin−2 and apair of outer slots SLout may be respectively formed in a first lead 110d−1 and a second lead 110 d−2 of the lead frame 110 d.

The inner slot SLin−1 formed in the first lead 110 d−1 and the innerslot SLin−2 formed in the second lead 110 d−2 may be formed in apoint-symmetrical structure with respect to a center point CP. In otherwords, the light-emitting device package 100 f of the present embodimentmay have a pair of inner slots SLin−1 and SLin−2 that are pointsymmetrical with respect to the center point CP and a pair of outerslots SLout that are line symmetrical with respect to the reference lineRL.

The structure of the molding structure 120 d of the light-emittingdevice package 100 f of the present embodiment may be different from thestructure of the molding structure 120 of the light-emitting devicepackage 100 of FIG. 1 due to a structural difference of the lead frame110 d. For example, in the light-emitting device package 100 f of thepresent embodiment, only one inner slot may be formed in each of thefirst lead 110 d−1 and the second lead 110 d−2, and the inner slotmolding portion 125 of FIG. 3 of the molding structure 120 d may beformed only in one part of each of the first and second leads 110 d−1and 110 d−2 in correspondence to a position of the inner slot.

In addition, side portions of an inner barrier 124 c extending in afirst direction (e.g., a X-axis direction) in a portion having no innerslot may be formed to have a thin thickness on the lead frame 110 a. Inother words, since an inner slot molding portion is not present in theportion having no inner slot, the side portions of the inner barrier 124c in the first direction (e.g., the X-axis direction) may not extend toa lower surface of the lead frame 110 d and may be formed on an uppersurface of the led frame 110 d.

In addition, a region division of the lead frame 110 d by the innerbarrier 124 c, the electrode separator 126, the outer slot moldingportion 125out, the groove 112 in the first area Ain of the lead frame110 d, and mounting of a flip-chip structure of the light-emittingdevice chip 130 by using the solder ball 135 positioned in the groove112 are the same as described with reference to FIGS. 1 to 5.

FIG. 12 is a plan view of a light-emitting device package 100 gaccording to an embodiment, and is a plan view corresponding to FIG. 3B.

Referring to FIG. 12, the light-emitting device package 100 g of thepresent embodiment may be different from the light-emitting devicepackage 100 of FIG. 1. Especially, an inner barrier 124 d of a moldingstructure 120 e in FIG. 12 is different from the inner barrier 124 inFIG. 1. Specifically, in the light-emitting device package 100 of FIG 1,the inner barrier 124 of the molding structure 120 may have arectangular closed ring shape. Accordingly, the first area Ain and thesecond area Aout of the lead frame 110 may be completely separated fromeach other by the inner barrier 124 when viewed from above. In contrast,in the light-emitting device package 100 g of the present embodiment,the inner barrier 124 d of the molding structure 120 e may have arectangular open ring shape in which openings Op are arranged in pans ofsides of the inner barrier 124 d. Accordingly, the first area Ain andthe second area Aout of the lead frame 110 e may have a structure inwhich the first area Ain and the second area Aout are connected to eachother through the openings Op.

A structure of the lead frame 110 of the light-emitting device package100 g of the present embodiment may be substantially the same as astructure of the lead frame 110 of the light-emitting device package 100of FIG. 1. However, since the inner barrier 124 d is formed only in anadjacent portion in the inner slot SLin and the outer slot SLout, anextrudability in a molding process may be improved. For example, in thelight-emitting device package 100 g of the present embodiment, the innerbarrier 124 d may be formed only on an upper portion of a portioncorresponding to the inner slot SLin and the outer slot SLout, and maynot be formed on an upper surface of the lead frame 110 of a portioncorresponding to the openings Op. Since an inner barrier in the portioncorresponding to the openings Op may be formed only on the upper surfaceof the lead frame 110 in the light-emitting device package 100 of FIG.1, when a thickness of the inner barrier is small, the portion may notbe completely filled with a molding material in the molding process.Accordingly, the extrudability of the molding process may be lowered.However, in the light-emitting device package 100 g of the presentembodiment, since the inner barrier is not formed in the portioncorresponding to the openings Op, it may not be necessary to fill theportion with the molding material. Therefore, the extrudability of themolding process may be improved.

FIGS. 13A and 13B are respectively a cross-sectional view of alight-emitting device package 100 h and a plan view showing a structureof a lead frame 110 e included in the light-emitting device package 110h according to an embodiment. FIG. 13A is the cross-sectional viewcorresponding to FIG. 5.

Referring to FIGS. 13A and 13B, the light-emitting device package 100 hof the present embodiment may be different from the light-emittingdevice package 100 of FIG. 1. Especially, an inner slot SLin′ of thelead frame 110 e in FIGS. 13A and 13B is different from the inner slotSLin in FIG. 1. Specifically, in the light-emitting device package 100of FIG. 1, the inner slot SLin of the lead frame 110 may be formed so asto penetrate from a top surface to a bottom surface of the lead frame110. In contrast, in the light-emitting device package 100 h of thepresent embodiment, the inner slot SLin′ of the lead frame 110 c may beformed in a groove structure only in an upper portion of the lead frame110 e. Accordingly, as seen from FIGS. 13A and 13B, the lead frame 110 emay exist at a lower portion of the inner slot SLin′. The lower portionof the inner slot SLin′ may have a structure blocked by the lead frame110 e.

A structure of the molding structure 120 f of the light-emitting devicepackage 100 h of the present embodiment may be different from astructure of the molding structure 120 of the light-emitting devicepackage 100 of FIG. 1 due to a structural difference of the lead frame110 e. For example, in the light-emitting device package 100 h of thepresent embodiment, since the inner slot SLin′ of the lead frame 110 ehas a groove structure, as shown in FIG. 13A, an inner slot moldingportion 125in′ may be formed as a structure that fills a groove ratherthan a structure that passes through the lead frame 110 e. In otherwords, the inner slot molding portion 125in′ may not be exposed to alower surface of the lead frame 110 e, and accordingly, a thickness ofthe inner slot molding portion 125in′ may be smaller than a thickness ofthe lead frame 110 e.

In addition, a region division of the lead frame 110 e by the innerbarrier 124 and a structure of the inner barrier 124, the outer slotmolding portion 125out, the groove 112 in the first area Ain of the leadframe 110 e, and mounting of a flip-chip structure of the light-emittingdevice chip 130 by using the solder ball 135 positioned in the groove112 are the same as described with reference to FIGS. 1 to 5.

Furthermore, in the light-emitting device package 100 h of the presentembodiment, the outer slot SLout of the lead frame 110 e may be formedas a through hole, but a structure of the outer slot SLout is notlimited thereto. For example, the outer slot SLout may also be formed ina groove structure in which a lower portion thereof is closed. In such acase, the outer slot molding portion 125out may be formed in a structurefilling the groove of the outer slot SLout and may not be exposed to thelower surface of the lead frame 110 e.

FIGS. 14A and 14B are cross-sectional views of light emitting devicepackages according to embodiments. FIG. 15 is a graph of a relativeluminous flux according to a radius of curvature of a reflective layerin the light emitting device package of FIG. 14A. In FIG. 15, an x-axisdenotes a radius of curvature in units of millimeters (mm), and a y-axisdenote a relative luminous flux with respect to the radius of curvatureof 0.5 mm.

Referring to FIGS. 14A and 15, a light emitting device package 100 iaccording to an embodiment may be different from the light emittingdevice package 100 of FIG. 1, in terms of the structure of a reflectivelayer 150 a. In detail, in the light emitting device package 100 of FIG.1, the reflective layer 150 may have an upper surface having a flatshape with an infinite radius of curvature. In contrast, in the lightemitting device package 100 i of the present embodiment, the reflectivelayer 150 a may have a concave shape with a certain radius of curvature.For example, in the light emitting device package 100 i according to thepresent embodiment, the reflective layer 150 a may have a radius ofcurvature of 0.5 mm or more. However, the radius of curvature of thereflective layer 150 a is not limited to the above-described value. Theradius of curvature may be defined by a circle connecting both endpoints of the upper surface of the reflective layer 150 a and a pointthat is located farthest above or under from a straight line connectingboth end points. According to embodiments, the upper surface of thereflective layer 150 a may have an uneven portion corresponding to aninflection point. In this case, the radius of curvature of thereflective layer 150 a may be defined by a plurality of circles havingdifferent center points, for example, two or three circles.

As a reciprocal of the radius of curvature is a curvature, thereflective layer 150 a may have a curvature of 1/(0.5 mm)=2/mm or less.The radius of curvature and the curvature are defined as having a (+)value w hen the upper surface of the reflective layer 150 a has aconcave state as in FIG. 14A, and as having a (−) value when an uppersurface of a reflective layer 150 b has in a convex state as in FIG.14B. The signs of the radius of curvature and the curvature may bedefined reversely.

As may be seen from the graph of FIG. 15, as the radius of curvature ofthe reflective layer 150 a increases, it may be seen that luminous fluxincreases. For example, in the graph of FIG. 15, it may be seen that,with respect to a radius of curvature of 0.5 mm, as the radius ofcurvature increases from 0.53 mm to 0.65 mm, 1.25 mm, and 2.0 mm, arelative luminous flux increase from 100.1% to 100.3%, 100.8%, and101.4%, accordingly.

Referring to FIG. 14B, a light emitting device package 100 j accordingto the present embodiment may be different form the light emittingdevice package 100 of FIG. 1, in the structure of the reflective layer150 b. In detail, in the light emitting device package 100 j of thepresent embodiment, the reflective layer 150 b may have a convex shapehaving a certain radius of curvature. For example, in the light emittingdevice package 100 j of the present embodiment, the reflective layer 150b may have a radius of curvature of −0.75 mm or less. However, theradius of curvature of the reflective layer 150 b is not limited to theabove-described values. When expressed in terms of curvature, thereflective layer 150 b may have a curvature of 1/(−0.75 mm)≈−1.33/mm ormore.

Considering the light emitting device packages 100, 100 i, and 100 j ofFIGS. 1, 14A, and 14B together, the reflective layers 150, 150 a, and150 b may have a radius of curvature, for example, between 0.5 mm and(+) infinity, and between (−) infinity and −0.75 mm. When expressed interms of curvature, the reflective layers 150, 150 a, and 150 b may havea curvature between −1.33/mm and 2/mm.

Generally, the radius of curvature of the reflective layer may increaseaccording to an increase in the size of a light emitting device package.For example, the light emitting device packages 100, 100 i, and 100 j ofFIGS. 1, 14A, and 14B may have a plan area of about 3 mm*3 mm, and havethe above-described radius of curvature.

While the inventive concept has been particularly shown and describedwith reference to embodiments thereof, it will be understood thatvarious changes in form and details may be made therein withoutdeparting from the spirit and scope of the following claims.

What is claimed is:
 1. A light-emitting device package, comprising: alead frame comprising: a first metallic lead comprising: a first innermetallic lead portion; and a first outer metallic lead portion; and asecond metallic lead comprising: a second inner metallic lead portion; asecond outer metallic lead portion, the first metallic lead and thesecond metallic lead being spaced apart from each other in a firstdirection, a light-emitting device chip disposed in a flip-chipstructure on a part of the first inner metallic lead portion and a partof the second inner metallic lead portion; and a molding structurecomprising: an outer barrier portion surrounding the first and secondinner metallic lead portions of the lead frame, the first and secondouter metallic lead portions protruding from the outer barrier portion;and an electrode separating portion disposed between the first metalliclead and the second metallic lead and filling space between the firstand second metallic leads, the electrode separating portion extending ina second direction intersecting the first direction, wherein each of thefirst and second metallic leads comprises at least two inner slotsformed to extend in the first direction, the at least two inner slots ofthe first metallic lead penetrating through an upper surface to a lowersurface of the first metallic lead, the at least two inner slots of thesecond metallic lead penetrating through an upper surface to a lowersurface of the second metallic lead, and wherein the molding structurefurther comprises inner slot molding portions integrally connected tothe electrode separating portion and filling the at least two innerslots of each of the first metallic lead and the second metallic lead.2. The light-emitting device package of claim 1, wherein thelight-emitting device chip is disposed between the at least two innerslots of the first metallic lead and between the at least two innerslots of the second metallic lead along the second direction.
 3. Thelight-emitting device package of claim 1, wherein the at least two innerslots of each of the first metallic lead and the second metallic leadextend in the first direction perpendicular to the second direction. 4.The light-emitting device package of claim 1, wherein each of the firstand second metallic leads further comprises a groove formed in the firstand second inner metallic lead portions, respectively.
 5. Thelight-emitting device package of claim 1, wherein the first metalliclead further comprises a first outer slot portion extending toward thesecond metallic lead, and wherein the second metallic lead furthercomprises a second outer slot portion extending toward the firstmetallic lead.
 6. The light-emitting device package of claim 1, whereina width of an upper portion of the electrode separating portion betweenthe first and second metallic leads is different from a width of a lowerportion of the electrode separating portion, the upper portion ofelectrode separating portion being closer to the light-emitting devicechip than the lower portion of the electrode separating portion.
 7. Thelight-emitting device package of claim 6, wherein the width of the upperportion of the electrode separating portion between the first and secondmetallic lead is smaller than the width of the lower portion of theelectrode separating portion.
 8. The light-emitting device package ofclaim 1, wherein the light-emitting device chip is provided over theelectrode separating portion provided between the first and second innermetallic lead portion.
 9. A light-emitting device package, comprising: alead frame comprising: a first metallic lead comprising: a first innerportion; and a first outer portion; and a second metallic leadcomprising: a second inner portion; a second outer portion, the firstmetallic lead and the second metallic lead being symmetrical withrespect to a center line of the light-emitting device package extendingin a first direction, a light-emitting device chip being mounted to thefirst inner portion and the second inner portion in a flip-chipstructure; and a molding structure in which the first and second innerportions are disposed, and the molding structure comprising: an outerbarrier embedding the first and second inner portions of the lead frame,the first and second outer portions protruding front the outer barrier;an inner barrier provided under the light-emitting device chip; and anelectrode separator disposed between the first inner portion of thefirst metallic lead and the second inner portion of the second metalliclead and being disposed between the first and second inner portions, theelectrode separator extending in the first direction, wherein the firstinner portion comprises a first slot and a second slot formed to extendin a second direction intersecting the first direction, the first andsecond slots of the first metallic lead penetrating through an uppersurface to a low er surface of the first metallic lead, wherein thesecond inner portion comprises a third slot and a fourth slot formed toextend in a third direction intersecting the first direction and beingopposite to the second direction, the third and fourth slots of thesecond metallic lead penetrating through an upper surface to a lowersurface of the second metallic lead, and wherein the molding structurefurther comprises inner slot molding portions integrally connected tothe electrode separator and filling the first, second, third and fourthslots.
 10. The light-emitting device package of claim 9, wherein thelight-emitting device chip is disposed between the first and secondslots of the first metallic lead along the first direction and betweenthe third and fourth slots of the second metallic lead along the firstdirection.
 11. The light-emitting device package of claim 9, wherein thefirst direction is perpendicular to the second direction.
 12. Thelight-emitting device package of claim 9, wherein each of the first andsecond inner portions further comprises a groove formed therein.
 13. Thelight-emitting device package of claim 8, wherein the first metalliclead further comprises a first outer slot extending in a third directiontoward the second metallic lead, and wherein the second metallic leadfurther comprises a second outer slot extending in the second directiontoward the first metallic lead.
 14. The light-emitting device package ofclaim 9, wherein a width of an upper portion of the electrode separatoris different from a width of a lower portion of the electrode separator,the upper portion of the electrode separator being closer to thelight-emitting device chip than the lower portion of the electrodeseparator.
 15. The light-emitting device package of claim 14, whereinthe width of the upper portion of the electrode separator between thefirst and second metallic lead is smaller than the width of the lowerportion of the electrode separator.
 16. A light-emitting device package,comprising: a molding structure comprising: an outer barrier; anelectrode separator; and an inner barrier; a lead frame disposed in themolding structure and comprising: a first metallic lead comprising: afirst inner lead surrounded by the outer barrier; and a first outer leadprotruding out of the outer barrier; and a second metallic leadcomprising: a second inner lead surrounded by the outer barrier; and asecond outer lead protruding out of the outer barrier, the firstmetallic lead and the second metallic lead being spaced apart from eachother in a first direction and being symmetrical with respect to acenter line of the light-emitting device package extending in a seconddirection perpendicular to the first direction; and a light-emittingdevice chip being electrically connected to the first and second innerleads in a flip-chip structure and being overlapped with the innerbarrier, wherein the first inner lead comprises a first slot and asecond slot and the second inner lead comprises a third slot and afourth slot, the first and second slots of the first metallic leadpenetrating through an upper surface to a lower surface of the firstmetallic lead, the third and fourth slots of the second metallic leadpenetrating through an upper surface to a lower surface of the secondmetallic lead, and wherein the first slot is symmetrical with the thirdslot with respect to the center line and the second slot is symmetricalwith the fourth slot with respect to the center line.
 17. Thelight-emitting device package of claim 16, wherein the molding structurefurther comprises inner slot molding portions integrally connected tothe electrode separator and filling the first, second, third and fourthslots.
 18. The light-emitting device package of claim 16, wherein awidth of an upper portion of the electrode separator is different from awidth of a lower portion of the electrode separator, the upper portionof electrode separator being closer to the light-emitting device chipthan the lower portion of the electrode separator.
 19. Thelight-emitting device package of claim 18, wherein the width of theupper portion of the electrode separator between the first and secondmetallic lead is smaller than the width of the lower portion of theelectrode separator.
 20. The light-emitting device package of claim 16,wherein each of the first and second inner portions comprises: a chipportion on which the light-emitting device chip is disposed; and twolateral portions formed to extend from the chip portion and configuredto reduce stress generated due to difference in physical propertiesbetween the lead frame and the molding structure.